概述Description
QX52X,QX55X 系列器件中系由一个GaAs红外发光二极管和一个单晶硅芯片的随机相位光电双向晶闸管组 成的光电耦合器。 The QX52X, QX55X series devices are optocouplers composed of a GaAs infrared light emitting diode and a single-crystal silicon chip random phase photoelectric bidirectional thyristor.
特性Features
峰值击穿电压 Peak breakdown voltage 400V:QX52X; 600V:QX55X;
输入-输出隔离电压(VISO=5000 Vrms ) High isolation voltage between input and output(VISO=5000 Vrms )
工作温度:-55℃~100℃ Operating Temperature:-55℃~100℃
符合加强绝缘标准 Meet reinforced insulation standards 符合安规标准:UL1577,VDEDINEN60747-5-5 (VDE 0884-5),CQC11-471543-2022 Safety standard approval: UL 1577, VDE DIN EN60747-5-5 (VDE 0884-5),CQC11-471543-2022
可替代
MOC301XM FODM305X